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| Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA Key Features * * * * * * TGA4509-SM Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA (Id = 800mA under RF drive) Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications * * * Ka-Band VSAT Ground Terminal Point-to-Point Radio Point-to-Multipoint Communications Product Description The TriQuint TGA4509-SM is a Ka-Band Packaged 1W Power Amplifier. The TGA4509-SM operates from 28-31 GHz and is designed using TriQuint's proven standard 0.25 um power pHEMT production process. The TGA4509-SM typically provides 30 dBm of output power at 1 dB gain compression with small signal gain of 19 dB. The TGA4509-SM is available in a lowcost, surface mount 4x4 QFN style package and is ideally suited for Kaband VSAT Ground Terminal, Point-toPoint Radio and Point-to-Multipoint applications. Evaluation Boards are available upon request. Lead-free and RoHS compliant. Measured Performance Bias Conditions: Vd = 6V, Idq = 420mA 24 22 20 18 16 14 12 10 8 6 4 2 0 28 28.5 29 29.5 30 30.5 31 Input Output Gain 0 -2 -4 -6 -10 -12 -14 -16 -18 -20 -22 -24 -8 Frequency (GHz) 33 32 Output Power (dBm) 31 30 29 28 27 26 25 24 23 28 28.5 29 29.5 30 30.5 31 P1dB Psat Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Gain (dB) Advance Product Information TABLE I MAXIMUM RATINGS Symbol V I + November 11, 2005 TGA4509-SM Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 7V -5V to 0V 984 mA 35 mA 22 dBm See Note 3 150 C 260 C -65 to 150 C Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ V+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 22.4 (C/W) These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ 5/ 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) Bias Conditions: Vd = 6V, Idq = 420mA SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 28-31 GHz 19 dB IRL Input Return Loss f = 28-31 GHz 16 dB ORL Output Return Loss f = 28-31 GHz 10 dB Psat Saturated Output Power Output Power @ 1dB Compression f = 28-31 GHz 30.5 dBm P1dB f = 28-31 GHz 30 dBm TABLE III THERMAL INFORMATION PARAMETER R jc Thermal Resistance (Channel to package) TEST CONDITION V D = 6V IDq = 420mA P Diss = 2.52 W T CH (qC) 141 R Tjc MTTF (qC/W) (HRS) 22.4 2.2 E+6 Note: Backside of package is at 85 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 4.8 W with 1 W RF power delivered to load. Power dissipated is 3.8 W and the temperature rise in the channel is 85 C. Baseplate temperature must be reduced to 65 C to remain below the 150 C maximum channel temperature. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Measured Performance Bias Conditions: Vd = 6 V, Idq = 420 mA 24 22 20 18 16 14 12 10 8 6 4 2 0 25 26 27 28 29 30 31 32 33 34 35 Input Gain 0 -2 -4 -6 -10 -12 -14 -16 -18 -20 -22 -24 -8 Output Frequency (GHz) 24 22 20 18 16 Gain (dB) 14 12 10 8 6 4 2 0 25 26 27 28 29 30 31 32 33 34 35 -40 deg C +25 deg C +80 deg C * Note: Temperature data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been de-embedded. 4 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Gain (dB) Advance Product Information November 11, 2005 TGA4509-SM Measured Performance Bias Conditions: Vd = 6 V, Idq = 420 mA 33 32 Output Power (dBm) 31 30 29 28 27 26 25 24 23 28 28.5 29 29.5 30 30.5 31 31.5 32 P1dB Psat Frequency (GHz) 33 30 27 24 21 18 15 12 9 6 3 0 -18 -14 -10 -6 -2 2 6 10 14 18 Pout Gain Ids 1100 1000 900 800 600 500 400 300 200 100 0 700 Gain (dB) & Pout (dBm) Input Power @ 30 GHz (dBm) Ids (mA) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Package Pinout Diagram 16 17 18 19 20 1 TGA 4509 15 14 21 13 2 3 Date Code Lot Code Top View Dot indicates Pin 1 12 4 11 10 9 5 8 7 6 Bottom View Pin 1, 5, 6, 10, 11, 15, 16, 20, 21 2, 4, 8, 12, 14, 17, 18, 19 3 7 and/or 19 9 and/or 17 13 Description GND NC RF Input Vg Vd RF Output GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Mechanical Drawing 19X 0.40 16 17 18 19 20 1 15 14 2.200.125 4.000.25 21 13 Ground Pad 3 2 12 4 11 10 9 5 8 7 6 2.200.125 3.20 4.000.25 20X 0.25 16X 0.65 (PITCH) 4X R0.13 3.20 Units: millimeters. Tolerance is 0.076mm unless otherwise specified Bottom view GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Recommended Board Layout Assembly * 7XQLQJ 6WXE X) X) 7XQLQJ 6WXE 9G 9 RKP 9J a 9 $GMXVW 9J WR REWDLQ ,G P$ X) RKP X) Units: mils * The layout is a general purpose drawing that needs to be tuned for the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information November 11, 2005 TGA4509-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate SnPb 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec Pb Free 3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGA4509-SM Package Style QFN 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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